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EPC8QC100DM

EPC8QC100DM

Manufacturer No:

EPC8QC100DM

Manufacturer:

Intel

Description:

IC CONFIG DEVICE

Datasheet:

Datasheet

Delivery:

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EPC8QC100DM Specifications

  • Type
    Parameter
  • Supplier Device Package
    100-PQFP (20x14)
  • Package / Case
    100-BQFP
  • Mounting Type
    Surface Mount
  • Operating Temperature
    0°C ~ 70°C
  • Voltage - Supply
    3V ~ 3.6V
  • Programmable Type
    In System Programmable
  • DigiKey Programmable
    Not Verified
  • Packaging
    Tube
  • Product Status
    Obsolete
  • Series
    EPC
The EPC8QC100DM is a specific model of integrated circuit (IC) chip manufactured by Efficient Power Conversion (EPC). It is a gallium nitride (GaN) power transistor designed for high-frequency power conversion applications. Here are some advantages and application scenarios of the EPC8QC100DM:Advantages: 1. High Efficiency: GaN technology offers higher efficiency compared to traditional silicon-based power transistors. The EPC8QC100DM provides low conduction and switching losses, resulting in improved power conversion efficiency. 2. High Power Density: GaN transistors can handle higher power levels in a smaller form factor, enabling compact and lightweight designs. 3. Fast Switching Speed: The EPC8QC100DM has a fast switching capability, allowing for high-frequency operation and reducing the size and cost of passive components in the circuit. 4. High Reliability: GaN technology offers excellent thermal performance, reducing the risk of overheating and improving the overall reliability of the system.Application Scenarios: 1. Power Electronics: The EPC8QC100DM is commonly used in various power electronics applications, such as DC-DC converters, AC-DC converters, motor drives, and inverters. Its high efficiency and power density make it suitable for applications requiring high power conversion efficiency and compact designs. 2. Wireless Power Transfer: GaN transistors are well-suited for wireless power transfer systems, including wireless charging pads for smartphones, electric vehicle (EV) wireless charging systems, and wireless power transfer in industrial applications. 3. RF Amplifiers: The fast switching speed and high-frequency operation of the EPC8QC100DM make it suitable for RF amplifiers used in telecommunications, radar systems, and wireless communication devices. 4. Lidar Systems: GaN transistors are increasingly used in lidar (light detection and ranging) systems for autonomous vehicles and robotics. The EPC8QC100DM can be used in lidar transmitters, which require high-frequency operation and high power density.It's important to note that the specific advantages and application scenarios of the EPC8QC100DM may vary depending on the system requirements and design considerations.
EPC8QC100DM Relevant information