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TH58NYG2S3HBAI4

TH58NYG2S3HBAI4

Manufacturer No:

TH58NYG2S3HBAI4

Manufacturer:

Kioxia America, Inc.

Description:

IC FLASH 4GBIT PARALLEL 63BGA

Datasheet:

Datasheet

Delivery:

Payment:

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TH58NYG2S3HBAI4 Specifications

  • Type
    Parameter
  • Access Time
    -
  • Supplier Device Package
    63-BGA (9x11)
  • Package / Case
    63-BGA
  • Mounting Type
    Surface Mount
  • Operating Temperature
    -40°C ~ 85°C (TA)
  • Voltage - Supply
    1.7V ~ 1.95V
  • Write Cycle Time - Word, Page
    25ns
  • Memory Interface
    Parallel
  • Memory Organization
    512M x 8
  • Memory Size
    4Gbit
  • Technology
    FLASH - NAND (SLC)
  • Memory Format
    FLASH
  • Memory Type
    Non-Volatile
  • DigiKey Programmable
    Not Verified
  • Packaging
    Tray
  • Product Status
    Active
  • Series
    -
The TH58NYG2S3HBAI4 integrated circuit (IC) chips are commonly used NAND Flash Memory chips. Some advantages and application scenarios of TH58NYG2S3HBAI4 chips are:1. High-density storage: The TH58NYG2S3HBAI4 chips offer high storage density, allowing for larger data storage capacities. This makes them suitable for applications that require storing large amounts of data, such as smartphones, tablets, solid-state drives (SSDs), and memory cards.2. High-speed data transfer: These chips offer high-speed data transfer rates, enabling faster read and write operations. This is beneficial in applications requiring quick access to data or high-speed data processing, such as gaming consoles, automotive infotainment systems, and industrial control systems.3. Compact form factor: TH58NYG2S3HBAI4 chips are designed to be compact, allowing for easy integration into small electronic devices. This makes them suitable for compact and portable devices like wearables, digital cameras, and IoT devices.4. Cost-effective: NAND Flash Memory chips, including the TH58NYG2S3HBAI4, are generally more cost-effective compared to other memory technologies like NOR Flash. This makes them a preferred choice for applications with cost constraints, such as consumer electronics, USB drives, and set-top boxes.5. Durability and reliability: NAND Flash memory chips offer high endurance and data retention capabilities, ensuring reliable long-term data storage. This makes them suitable for applications that require frequent data read and write operations, and where data integrity is critical, such as in industrial systems, medical devices, and aerospace.6. Extended temperature range: The TH58NYG2S3HBAI4 chips are designed to operate over an extended temperature range, typically from -40°C to +85°C. This makes them suitable for use in harsh environments where temperature variations are significant, such as automotive and military applications.Overall, TH58NYG2S3HBAI4 NAND Flash memory chips find application in a wide range of consumer electronics, industrial systems, automotive systems, and other electronic devices that require high-density, high-speed, cost-effective, and reliable data storage solutions.
TH58NYG2S3HBAI4 Relevant information