Home / Memory / IS43DR16128C-25DBL/
IS43DR16128C-25DBL

IS43DR16128C-25DBL

Manufacturer No:

IS43DR16128C-25DBL

Description:

IC DRAM 2GBIT PARALLEL 84TWBGA

Datasheet:

Datasheet

Delivery:

Payment:

Please send RFQ , we will respond immediately.

IS43DR16128C-25DBL Specifications

  • Type
    Parameter
  • Clock Frequency
    400 MHz
  • Supplier Device Package
    84-TWBGA (8x12.5)
  • Package / Case
    84-TFBGA
  • Mounting Type
    Surface Mount
  • Operating Temperature
    0°C ~ 85°C (TC)
  • Voltage - Supply
    1.7V ~ 1.9V
  • Access Time
    400 ps
  • Write Cycle Time - Word, Page
    15ns
  • Memory Interface
    Parallel
  • Memory Organization
    128M x 16
  • Memory Size
    2Gbit
  • Technology
    SDRAM - DDR2
  • Memory Format
    DRAM
  • Memory Type
    Volatile
  • DigiKey Programmable
    Not Verified
  • Packaging
    Tray
  • Product Status
    Active
  • Series
    -
The S29GL512T12TFN010 is a specific model of integrated circuit (IC) chip manufactured by Cypress Semiconductor. It is a 512-megabit (64-megabyte) single-voltage flash memory chip. Here are some advantages and application scenarios of this IC chip:Advantages: 1. High Capacity: The S29GL512T12TFN010 offers a large storage capacity of 512 megabits, which is equivalent to 64 megabytes. This makes it suitable for applications that require significant data storage.2. High Performance: The chip operates at a fast access time of 120 nanoseconds, allowing for quick read and write operations. It also supports a high-speed parallel interface, enabling efficient data transfer.3. Reliable and Durable: The flash memory chip is designed to be highly reliable and durable. It offers a minimum of 100,000 program/erase cycles, ensuring a long lifespan for the chip.4. Low Power Consumption: The S29GL512T12TFN010 is designed to operate at low power, making it suitable for battery-powered devices or applications where power efficiency is crucial.Application Scenarios: 1. Embedded Systems: The high capacity and performance of the S29GL512T12TFN010 make it suitable for use in embedded systems, such as industrial control systems, automotive electronics, or consumer electronics. It can be used to store firmware, configuration data, or other critical information.2. Data Storage: The chip's large storage capacity makes it suitable for applications that require significant data storage, such as data loggers, data acquisition systems, or network storage devices.3. Portable Devices: The low power consumption and high capacity of the chip make it suitable for use in portable devices like smartphones, tablets, or portable media players. It can be used to store operating systems, applications, or user data.4. Networking Equipment: The high-speed parallel interface and large storage capacity of the chip make it suitable for use in networking equipment, such as routers or switches. It can be used to store firmware, configuration data, or logging information.Overall, the S29GL512T12TFN010 flash memory chip offers high capacity, performance, reliability, and low power consumption, making it suitable for a wide range of applications that require significant data storage and fast access times.
IS43DR16128C-25DBL Relevant information