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AS4C8M16SA-6BIN

AS4C8M16SA-6BIN

Manufacturer No:

AS4C8M16SA-6BIN

Manufacturer:

Alliance Memory, Inc.

Description:

IC DRAM 128MBIT PAR 54TFBGA

Datasheet:

Datasheet

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AS4C8M16SA-6BIN Specifications

  • Type
    Parameter
  • Clock Frequency
    166 MHz
  • Supplier Device Package
    54-TFBGA (8x8)
  • Package / Case
    54-TFBGA
  • Mounting Type
    Surface Mount
  • Operating Temperature
    -40°C ~ 85°C (TA)
  • Voltage - Supply
    3V ~ 3.6V
  • Access Time
    5 ns
  • Write Cycle Time - Word, Page
    12ns
  • Memory Interface
    Parallel
  • Memory Organization
    8M x 16
  • Memory Size
    128Mbit
  • Technology
    SDRAM
  • Memory Format
    DRAM
  • Memory Type
    Volatile
  • DigiKey Programmable
    Not Verified
  • Packaging
    Tray
  • Product Status
    Active
  • Series
    -
The HN58X25256FPIAG#S1 integrated circuit chip is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) chip manufactured by Renesas Electronics. It offers several advantages and can be applied in various scenarios:1. High storage capacity: The HN58X25256FPIAG#S1 provides a storage capacity of 256 kilobits (32 kilobytes). This allows for storing a significant amount of data, making it suitable for applications requiring large amounts of non-volatile memory.2. Reprogrammable memory: As an EEPROM chip, the HN58X25256FPIAG#S1 enables users to rewrite or reprogram the stored data electronically. This flexibility is valuable in situations where data needs to be updated or modified frequently.3. Low power consumption: The chip is designed for low-power operation, making it suitable for battery-powered devices or applications where power efficiency is essential. It helps prolong the battery life by minimizing power consumption during read and write operations.4. High-speed operation: The HN58X25256FPIAG#S1 offers fast read and write access times, allowing for quick retrieval and modification of stored data. This makes it suitable for applications requiring fast data processing or real-time data access.5. Wide operating voltage range: The chip can operate within a wide voltage range, typically from 1.8V to 5.5V. This flexibility in voltage compatibility makes it compatible with various electronic systems and enables easy integration with other components.Application scenarios for HN58X25256FPIAG#S1 integrated circuit chips include:1. Embedded systems: The chip's high storage capacity and fast access times make it ideal for use in embedded systems, such as microcontrollers, where non-volatile memory is required to store firmware, configuration data, or logging information.2. Industrial automation: The ability to reprogram the memory enables easy updates of settings or parameters in industrial automation systems. The chip's robust design can withstand harsh environmental conditions, making it suitable for applications in factories or industrial equipment.3. Smart meters: The large storage capacity and low power consumption of the chip make it suitable for smart metering applications. It can store consumption data, user information, or firmware updates, while the low-power operation ensures an extended operational lifetime.4. Consumer electronics: The HN58X25256FPIAG#S1 chip can be used in various consumer electronics devices like smart home systems, wearable devices, or Internet of Things (IoT) devices. It provides non-volatile memory for data storage, firmware updates, or user settings.5. Automotive electronics: The chip's wide operating voltage range, high-speed operation, and robust design make it suitable for automotive applications. It can be used for storing data in automotive infotainment systems, vehicle telematics, or ECU firmware updates.Overall, the HN58X25256FPIAG#S1 integrated circuit chip offers high storage capacity, reprogrammability, low power consumption, and compatibility with various applications.
AS4C8M16SA-6BIN Relevant information