MT29F256G08EBHAFB16A3WC1ES
Manufacturer No:
MT29F256G08EBHAFB16A3WC1ES
Manufacturer:
Description:
IC FLASH 256GBIT PARALLEL DIE
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MT29F256G08EBHAFB16A3WC1ES Specifications
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TypeParameter
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Access Time-
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Supplier Device PackageDie
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Package / CaseDie
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Mounting TypeSurface Mount
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Operating Temperature0°C ~ 70°C (TA)
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Voltage - Supply2.5V ~ 3.6V
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Write Cycle Time - Word, Page-
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Clock Frequency333 MHz
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Memory InterfaceParallel
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Memory Organization32G x 8
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Memory Size256Gbit
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TechnologyFLASH - NAND (TLC)
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Memory FormatFLASH
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Memory TypeNon-Volatile
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DigiKey ProgrammableNot Verified
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PackagingBulk
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Product StatusObsolete
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Series-
The MT29F256G08EBHAFB16A3WC1ES integrated circuit chips have several advantages and application scenarios:Advantages: 1. High-capacity: The chip has a capacity of 256GB, making it suitable for storing large amounts of data. 2. High-speed: The chip has a high read and write speed, which makes it suitable for use in applications that require fast data access. 3. High durability: The chip has a high endurance rating, which makes it suitable for use in applications that require frequent data writing and rewriting. 4. Low power consumption: The chip has a low power consumption, making it suitable for use in applications that require low power usage.Application scenarios: 1. Solid-state drives (SSD): The chip can be used in the manufacture of SSDs, where it can be used to store data and improve the performance of the storage device. 2. Portable devices: The chip can be used in portable devices such as cameras, smartphones, and tablets, where it can be used to store large amounts of data. 3. Automotive electronics: The chip can be used in automotive electronics, where it can be used to store data and improve the performance of the vehicle's systems. 4. Industrial applications: The chip can be used in industrial applications such as automation and control, where it can be used to store data and improve the performance of the systems.
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