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LF353DR

LF353DR

Manufacturer No:

LF353DR

Manufacturer:

Texas Instruments

Description:

IC OPAMP JFET 2 CIRCUIT 8SOIC

Datasheet:

Datasheet

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LF353DR Specifications

  • Type
    Parameter
  • -3db Bandwidth
    -
  • Supplier Device Package
    8-SOIC
  • Package / Case
    8-SOIC (0.154", 3.90mm Width)
  • Mounting Type
    Surface Mount
  • Operating Temperature
    0°C ~ 70°C
  • Voltage - Supply Span (Max)
    36 V
  • Voltage - Supply Span (Min)
    7 V
  • Current - Output / Channel
    40 mA
  • Current - Supply
    3.6mA (x2 Channels)
  • Voltage - Input Offset
    5 mV
  • Current - Input Bias
    50 pA
  • Gain Bandwidth Product
    3 MHz
  • Slew Rate
    13V/µs
  • Output Type
    -
  • Number of Circuits
    2
  • Amplifier Type
    J-FET
  • Packaging
    Cut Tape (CT)
  • Packaging
    Tape & Reel (TR)
  • Product Status
    Active
  • Series
    -
The LF353DR is a dual operational amplifier integrated circuit chip. It offers several advantages and can be used in various application scenarios:1. Low Noise: The LF353DR has low input noise voltage, making it suitable for applications that require high precision and low noise amplification, such as audio amplifiers and signal conditioning circuits.2. Wide Bandwidth: With a wide bandwidth range, the LF353DR can handle high-frequency signals accurately. This makes it suitable for applications like active filters, oscillators, and high-frequency amplifiers.3. High Slew Rate: The LF353DR has a high slew rate, enabling it to respond quickly to fast-changing input signals. This makes it suitable for applications that require fast signal processing, such as data acquisition systems and high-speed comparators.4. Low Input Bias Current: The LF353DR has low input bias current, which minimizes the impact of input current on the circuit's performance. This makes it suitable for applications that require high input impedance, such as transimpedance amplifiers and sensor interfaces.5. Wide Supply Voltage Range: The LF353DR can operate with a wide supply voltage range, allowing it to be used in various power supply configurations. This makes it suitable for battery-powered devices, as well as applications that require a wide range of supply voltages.Application scenarios for LF353DR include:1. Audio Amplifiers: The low noise and wide bandwidth of LF353DR make it suitable for audio amplification applications, such as headphone amplifiers, audio mixers, and preamplifiers.2. Instrumentation Amplifiers: The LF353DR's low input bias current and high input impedance make it suitable for instrumentation amplifier circuits used in measurement and sensing applications.3. Active Filters: The LF353DR's wide bandwidth and high slew rate make it suitable for active filter circuits used in audio processing, communications, and control systems.4. Oscillators: The LF353DR's wide bandwidth and high slew rate make it suitable for oscillator circuits used in frequency generation and clocking applications.5. Data Acquisition Systems: The LF353DR's high slew rate and low noise make it suitable for data acquisition systems that require accurate and fast signal processing, such as data loggers and data recorders.Overall, the LF353DR integrated circuit chip offers advantages such as low noise, wide bandwidth, high slew rate, low input bias current, and wide supply voltage range, making it suitable for a wide range of applications requiring precision amplification and signal processing.
LF353DR Relevant information